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UT4406 - N-Channel MOSFET

General Description

The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC’s advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion.

Key Features

  • RDS(ON) ≤ 14.8mΩ @ VGS=10V, ID=12A.
  • RDS(ON) ≤ 17.5mΩ @ VGS=4.5V, ID=10A.
  • RDS(ON) ≤ 26.8mΩ @ VGS=2.5V, ID=8.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL SOP-8 1 DFN5060-8 1 DFN3030-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4406 N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC’s advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion.  FEATURES * RDS(ON) ≤ 14.8mΩ @ VGS=10V, ID=12A * RDS(ON) ≤ 17.5mΩ @ VGS=4.5V, ID=10A * RDS(ON) ≤ 26.8mΩ @ VGS=2.5V, ID=8.