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UT4413 - P-CHANNEL ENHANCEMENT MODE

General Description

The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • ES.
  • RDS(ON) = 8.5mΩ @VGS = -10 V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Drain.
  • Pb-free plating product number: UT4413L Gate Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION Power MOSFET The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL Drain *Pb-free plating product number: UT4413L Gate Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT4413-S08-R UT4413L-S08-R UT4413-S08-T UT4413L-S08-T Package SOP-8 SOP-8 Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-198.A Free Datasheet http://www.datasheet4u.