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UT4414 - N-CHANNEL TRANSISTOR

General Description

excellent trench technology to provide customers perfect RDS(ON) and low gate charge.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Key Features

  • S.
  • VDSS = 30V.
  • ID=8.5A @ VGS=10V.
  • RDS(ON) ≤ 26mΩ @ VGS=10V,ID=8.5A.
  • RDS(ON) ≤ 40mΩ @ VGS=4.5V, ID=5.0A.
  • SYMBOL Drain Gate Source.

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Other Datasheets by Unisonic Technologies

Part Number Description
UT4410 N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4414 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. This device can be applied in a load switch or in PWM applications. 3 2 1 SOT-23 (EIAJ SC-59) 1 SOT-89 1 TO-252  FEATURES * VDSS = 30V * ID=8.5A @ VGS=10V * RDS(ON) ≤ 26mΩ @ VGS=10V,ID=8.5A * RDS(ON) ≤ 40mΩ @ VGS=4.5V, ID=5.