Datasheet Details
| Part number | UT4800 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 210.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE |
| Datasheet | UT4800_UTC.pdf |
|
|
Overview: UNISONIC TECHNOLOGIES CO., LTD UT4800 N-CHANNEL ENHANCEMENT MODE .
| Part number | UT4800 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 210.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE |
| Datasheet | UT4800_UTC.pdf |
|
|
|
Power MOSFET The UT4800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
SYMBOL Drain *Pb-free plating product number: UT4800L Gate Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT4800-S08-R UT4800L-S08-R UT4800-S08-T UT4800L-S08-T Package SOP-8 SOP-8 Packing Tape Reel Tube .unisonic..tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-174.A Free Datasheet http://../ UT4800 PIN CONFIGURATION Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 6 QW-R502-174.A Free Datasheet http://../ UT4800 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 1) ID 6.5 A Pulsed Drain Current (Note 1) IDM 40 A Power Dissipation PD 1.3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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|---|---|
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| UT40N02 | N-CHANNEL MOSFET |
| UT40N03 | N-CHANNEL POWER MOSFET |
| UT40N03T | N-CHANNEL POWER MOSFET |
| UT40N04 | N-Channel MOSFET |
| UT40N25 | 250V N-CHANNEL POWER MOSFET |
| UT4101 | P-Channel Power MOSFET |
| UT4232 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |