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UT4810D - N-CHANNEL MOSFET

General Description

As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge

Key Features

  • S.
  • RDS(ON) < 13.5mΩ @ VGS=10V, ID=10A.
  • RDS(ON) < 20mΩ @ VGS=4.5V, ID=5A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET SOP-8 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4810D N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE  DESCRIPTION As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications: DC-DC logic level, low voltage and battery powered.  FEATURES * RDS(ON) < 13.5mΩ @ VGS=10V, ID=10A * RDS(ON) < 20mΩ @ VGS=4.5V, ID=5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET SOP-8 1.Gate 3.Source  ORDERING INFORMATION Ordering Number UT4810DG-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel  MARKING www.unisonic.com.