Datasheet4U Logo Datasheet4U.com

UT8P03V - P-CHANNEL POWER MOSFET

General Description

The UTC UT8P03V is a P-channel MOS Field Effect Transistor.

it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

The UTC UT8P03V is suitable for high voltage switching applications.

Key Features

  • RDS(ON) ≤ 40 mΩ @ VGS=-10V, ID=-4.0A RDS(ON) ≤ 45 mΩ @ VGS=-4.5V, ID=-4.0A RDS(ON) ≤ 50 mΩ @ VGS=-3.3V, ID=-4.0A RDS(ON) ≤ 65 mΩ @ VGS=-2.5V, ID=-4.0A.
  • High switching speed.
  • Low input capacitance.
  • SYMBOL.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT8P03V Preliminary -8.0A, -30V P-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UT8P03V is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT8P03V is suitable for high voltage switching applications.  FEATURES * RDS(ON) ≤ 40 mΩ @ VGS=-10V, ID=-4.0A RDS(ON) ≤ 45 mΩ @ VGS=-4.5V, ID=-4.0A RDS(ON) ≤ 50 mΩ @ VGS=-3.3V, ID=-4.0A RDS(ON) ≤ 65 mΩ @ VGS=-2.5V, ID=-4.