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UT8PP06M - P-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UT8PP06M is a P-channel MOS Field Effect Transistor.

it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

The UTC UT8PP06M is suitable for high voltage switching applications.

Features

  • RDS(ON) ≤ 110 mΩ @ VGS=-10V, ID=-2.0A.
  • RDS(ON) ≤ 145 mΩ @ VGS=-4.5V, ID=-1.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET SOP-8.

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Datasheet preview – UT8PP06M

Datasheet Details

Part number UT8PP06M
Manufacturer UTC
File Size 189.56 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet UT8PP06M Datasheet
Additional preview pages of the UT8PP06M datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT8PP06M Advance P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT8PP06M is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT8PP06M is suitable for high voltage switching applications.  FEATURES * RDS(ON) ≤ 110 mΩ @ VGS=-10V, ID=-2.0A * RDS(ON) ≤ 145 mΩ @ VGS=-4.5V, ID=-1.
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