• Part: UTG75N65ND-S
  • Description: 650V TRENCH GATE FIELD-STOP IGBT
  • Manufacturer: Unisonic Technologies
  • Size: 174.39 KB
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Datasheet Summary

UNISONIC TECHNOLOGIES CO., LTD Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT - DESCRIPTION The UTC UTG75N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG75N65ND-S is suitable for the resonant or soft switching applications. - Features - High switching speed - High avalanche ruggedness - Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=75A, VGE=15V (TC =25°C) - SYMBOL - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG75N65NDL-T47-R UTG75N65NDG-T47-R...