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UTG80N65ND-S Datasheet 650V TRENCH GATE FIELD-STOP IGBT

Manufacturer: Unisonic Technologies

General Description

The UTC UTG80N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG80N65ND-S is suitable for the resonant or soft switching applications.

Overview

UNISONIC TECHNOLOGIES CO., LTD UTG80N65ND-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT.

Key Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(SAT). Typ. = 1.6V @ IC=80A, VGE=15V (TC =25°C).
  • SYMBOL.