• Part: UTG80N65-S
  • Description: 650V TRENCH GATE FIELD-STOP IGBT
  • Manufacturer: Unisonic Technologies
  • Size: 716.13 KB
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Unisonic Technologies
UTG80N65-S
UTG80N65-S is 650V TRENCH GATE FIELD-STOP IGBT manufactured by Unisonic Technologies.
DESCRIPTION The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications. - FEATURES - High switching speed - High avalanche ruggedness - Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V (TC =25°C) - SYMBOL - ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG80N65L-T47-T UTG80N65G-T47-T Note: Pin Assignment: G: Gate C: Collector E: Emitter Package TO-247 Pin Assignment Packing Tube - MARKING .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 6 QW-R203-078.D Insulated Gate Bipolar Transistor - ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES Gate-Emitter Voltage Transient Gate-emitter voltage (tp < 5 ms) VGES ±20 ±25 Continuous Collector...