UTG80N65-S Description
The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications.
UTG80N65-S Key Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V
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