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UTG25N120-G2 Datasheet

Manufacturer: Unisonic Technologies
UTG25N120-G2 datasheet preview

Datasheet Details

Part number UTG25N120-G2
Datasheet UTG25N120-G2-UTC.pdf
File Size 746.71 KB
Manufacturer Unisonic Technologies
Description 1200V TRENCH GATE FIELD-STOP IGBT
UTG25N120-G2 page 2 UTG25N120-G2 page 3

UTG25N120-G2 Overview

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.

UTG25N120-G2 Key Features

  • High switching speed
  • High avalanche ruggedness
  • Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)
  • Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING
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UTG25N120-G2 Distributor

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