UTG25N120-G2 Description
The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.
UTG25N120-G2 Key Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)
- Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)
- SYMBOL
- ORDERING INFORMATION
- MARKING