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UTG28N65-S - 650V TRENCH GATE FIELD-STOP IGBT

General Description

Gate Bipolar Transistor.

voltage and low switching loss, etc.

switching applications.

Key Features

  • High switching speed.
  • High avalanche ruggedness 1.
  • Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=28A, VGE=15V (TC =25°C) TO-220.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1  DESCRIPTION The UTC UTG28N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG28N65-S is suitable for the resonant or soft 1 switching applications. TO-247 TO-220F1  FEATURES * High switching speed * High avalanche ruggedness 1 * Low saturation voltage: VCE(SAT).Typ.=1.