UTG25N65-S Description
The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N65-S is suitable for the resonant or soft switching applications.
UTG25N65-S Key Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25A, VGE=15V
- SYMBOL
- ORDERING INFORMATION
- MARKING