UTG25N120 Overview
The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UTG25N120 is suitable for the resonant or soft switching applications.
UTG25N120 Key Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
- Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C
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