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UTT3N10-H - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.

Features

  • RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A.
  • High switching speed.
  • Low grage.
  • SYMBOL Power MOSFET.

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Datasheet preview – UTT3N10-H

Datasheet Details

Part number UTT3N10-H
Manufacturer UTC
File Size 173.99 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UTT3N10-H Datasheet
Additional preview pages of the UTT3N10-H datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTT3N10-H Preliminary 2.5A, 100V N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge.  FEATURES * RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A * High switching speed * Low grage  SYMBOL Power MOSFET  ORDERING INFORMATION Order Number UTT3N10G-AA3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-061.
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