Datasheet4U Logo Datasheet4U.com

UTT6NP10 - DUAL-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting.

Features

  • r>.
  • RDS(on) ≤ 150 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=3.0A.
  • RDS(on) ≤ 155 mΩ @ VGS=-10V, ID=-3.0A RDS(on) ≤ 210 mΩ @ VGS=-4.5V, ID=-3.0A.
  • High switching speed.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

Datasheet preview – UTT6NP10

Datasheet Details

Part number UTT6NP10
Manufacturer UTC
File Size 1.01 MB
Description DUAL-CHANNEL POWER MOSFET
Datasheet download datasheet UTT6NP10 Datasheet
Additional preview pages of the UTT6NP10 datasheet.

📁 Similar Datasheet

  • UTT6N10 - 6A N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT6N10Z - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT6N10Z - N-Channel Power MOSFET (Kexin)
  • UTT60N05 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT60N06 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT60N10 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT60P03 - P-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT65P04 - P-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT100N05 - 50V N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UTT100N06 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is universally applied in high-speed switching, motor driver.  FEATURES * RDS(on) ≤ 150 mΩ @ VGS=10V, ID=3.0A RDS(on) ≤ 200 mΩ @ VGS=4.5V, ID=3.0A * RDS(on) ≤ 155 mΩ @ VGS=-10V, ID=-3.0A RDS(on) ≤ 210 mΩ @ VGS=-4.5V, ID=-3.
Published: |