Unisonic Technologies XL1225
The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.| Part No. | XL1225 |
|---|---|
| Datasheet | XL1225 Download |
| Manufacturer |  Unisonic Technologies |
| Description | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
SCR● ORDERING INFORMATION Ordering Number Lead Free Halogen Free - XL1225G-xx-AE3-R XL1225L-xx-T92-B XL1225G-xx-T92-B XL1225L-xx-T92-K XL1225G-xx-T92-K - ML1225G-xx-AE3-R ML1225L-xx-T92-B ML1225G-xx-T92-B ML1225L-xx-T92-K ML1225G-xx-T92-K Note: Pin Assignment : G: Gate K: Cathode A: Anode Package SOT-23 TO-92 TO-92 SOT-23 TO-92 TO-92 Pin Assignment 123 GKA KGA KGA GKA KGA KGA Packing Tape Reel Tape Box Bulk Tape Reel Tape Box Bulk
● MARKING Package SOT-23 TO-92 XL1225 MARKING Copyright © 2014 Unisonic Technologies Co.,LTD. ML1225 L25G 1 of 3 QW-R301-003.G XL/ML1225 SCR
● ABSOLUATE MAXIUM RATINGS (Ta= 25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage (TJ =40 ~ 125C, RGK =1kΩ ) XL1225 ML1225 VDRM 400 300 V On-State Current (Tc=40C) IT(RMS) 0.8 A Average On-State Current (Half Cycle=180,Tc=40C) IT(AV) 0.5 A Peak Reverse Gate Voltage (IGR=10A) VGRM 1 V Peak Gate Current (10s Max.) IGM 0.1 A Gate Dissipation (20ms Max.) PG(AV) 150 mW Junction Temperature TJ +125 C Storage Temperature TSTG -40 ~ +150 C Notes: 1.
