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TPV60R160M Datasheet PDF

Unigroup TPV60R160M

The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.
Part No. TPV60R160M
Datasheet TPV60R160M Download
Manufacturer
Unigroup
Description 600V Super-junction Power MOSFET
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TPV60R160M datasheet page 1 preview

DESCRIPTION

600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle.

FEATURES

l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l RoHS compliant

APPLICATIONS

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger TO-220F TO-220 TO-247 TO-3PN Device Marking and Package Information Device Package TPA60R160M TO-220F TPP60R160M TO-220 TPV60R160M TO-3PN TPW60R160M TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode diF/dt 650 0.16 38 20 60 5.69 500 V1.0 1 Marking 60R160M 60R160M 60R160M 60R160M Unit V Ω nC A A μJ A/μs TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-So...
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