TPV60R160M
TPV60R160M is 600V Super-junction Power MOSFET manufactured by Unigroup.
Description
600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics pany.
Features l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l Ro HS pliant
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger
TO-220F
TO-220
TO-247
TO-3PN
Device Marking and Package Information
Device
Package
TPA60R160M
TO-220F
TPP60R160M
TO-220
TO-3PN
TPW60R160M
TO-247
Key Performance Parameters
Parameter
Value
VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode di F/dt
650 0.16 38 20 60 5.69 500
V1.0
Marking 60R160M 60R160M 60R160M 60R160M
Unit V Ω n C A A μJ A/μs
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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Continuous Drain Current Pulsed Drain Current
TC = 25ºC TC = 100ºC
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
MOSFET dv/dt Ruggedness, VDS = 0...480V Power Dissipation For TO-220F
Power Dissipation For TO-220,TO-3PN,TO-247...
