TPV65R090M
TPV65R090M is 650V Super-junction Power MOSFET manufactured by Unigroup.
Description
650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics pany.
Features l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l Ro HS pliant
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger
TO-220F
TO-263
TO-3PN
TO-247
Device Marking and Package Information
Device
Package
TPA65R090M
TO-220F
TPB65R090M
TO-263
TO-3PN
TPW65R090M
TO-247
Key Performance Parameters
Parameter
Value
VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode di F/dt
700 0.09 75 47 141 9.53 500
Marking 65R090M 65R090M 65R090M 65R090M
Unit V Ω n C A A μJ A/μs
V1.0
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TPA65R090M,TPB65R090M,TPV65R090M,TPW65R090M Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Continuous Drain Current Pulsed Drain Current
TC = 25ºC TC = 100ºC
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
MOSFET dv/dt Ruggedness, VDS = 0...480V Power Dissipation For TO-220F
Power Dissipation For TO-263,TO-3PN,TO-247...
