TPV65R100MFD
TPV65R100MFD is 650V Super-Junction Power MOSFET manufactured by Unigroup.
Description
650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, also fits the industrial grade applications,like AC-DC SMPS requirements for PFC, AC/DC power conversion, designed by Wuxi Unigroup Microelectronics pany.
Features l Ultra-fast body diode l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l Ro HS pliant
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger
TO-220F
TO-3PN
TO-247
Device Marking and Package Information
Device
Package
TPA65R100MFD
TO-220F
TO-3PN
TPW65R100MFD
TO-247
Key Performance Parameters
Parameter
Value
VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode di F/dt trr Qrr Irrm
700 0.1 75 47 141 8.98 500 145 0.87 12
V1.0
Marking 65R100MFD 65R100MFD 65R100MFD
Unit V Ω n C A A μJ A/μs ns μC A
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TPA65R100MFD,TPV65R100MFD,TPW65R100MFD Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Continuous Drain Current Pulsed Drain Current
TC = 25ºC TC = 100ºC
Gate-Source Voltage Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current MOSFET dv/dt Ruggedness, VDS = 0...480V Power Dissipation For TO-220F
Power Dissipation For TO-3PN,TO-247
(note1)
(note2) (note2)
ID,pulse VGSS EAS EAR IAR...
