TPW65R120M
TPW65R120M is 650V Super-junction Power MOSFET manufactured by Unigroup.
Description
650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler,also fits the industrial grade applications,like AC-DC SMPS requirements for PFC, AC/DC power conversion, designed by Wuxi Unigroup Microelectronics pany.
Features l Very low FOM RDS(on)×Qg l 100% avalanche tested l Easy to use/drive l Ro HS pliant
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l Charger
TO-263
TO-220
TO-220FP-NL
TO-247
Device Marking and Package Information
Device
Package
TPB65R120M
TO-263
TPP65R120M
TO-220
TPR65R120M
TO-220FP-NL
TO-247
Key Performance Parameters
Parameter
Value
VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode di F/dt
700 0.12 57 30 90 6.54 500
V1.0
Marking 65R120M 65R120M 65R120M 65R120M
Unit V Ω n C A A μJ A/μs
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TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
TC = 25ºC TC = 100ºC
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current MOSFET dv/dt Ruggedness, VDS = 0...480V Power Dissipation For TO-220FP-NL
Power Dissipation For TO-263,TO-220,TO-247
Continuous Diode Forward...
