• Part: TPW65R135MFD
  • Description: 650V Super-junction Power MOSFET
  • Category: MOSFET
  • Manufacturer: Unigroup
  • Size: 1.69 MB
Download TPW65R135MFD Datasheet PDF
Unigroup
TPW65R135MFD
TPW65R135MFD is 650V Super-junction Power MOSFET manufactured by Unigroup.
Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs,designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching, munication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, also fits the industrial grade applications,like AC-DC SMPS requirements for PFC, AC/DC power conversion, designed by Wuxi Unigroup Microelectronics pany. Features l Ultra-fast body diode l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l Ro HS pliant TO-263 TO-220 Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger TO-247 Device Marking and Package Information Device Package TPB65R135MFD TO-263 TPP65R135MFD TO-220 TO-247 Key Performance Parameters Parameter Value VDS @ Tj,max RDS(on),max Qg,typ ID ID,pulse EOSS @ 400V Body Diode di F/dt trr 700 0.135 57 30 90 6.86 500 209 Qrr Irrm V1.0 Marking 65R135MFD 65R135MFD 65R135MFD Unit V Ω n C A A μJ A/μs ns μC A .tsinghuaicwx. TPB65R135MFD,TPP65R135MFD,TPW65R135MFD Wuxi Unigroup Microelectronics Co.,Ltd Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche Energy Repetitive Avalanche Energy Avalanche...