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UESD6V8S2B - Dual Line ESD Protection Diode Array

General Description

The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD and is for use in applications where board space is at a premium.

Key Features

  • z Cellular Handsets & Accessories z Cordless Phones z Personal Digital Assistants (PDA’s) z Notebooks & Handhelds z Portable Instrumentation z Digital Cameras z Peripherals z MP3 Players z Transient Protection for Data & Power Lines to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact) z MIL-STD-883 3015 (HBM) ±8kV z Protect Two I/O Lines z Working Voltages: 5V z Low Leakage Current z Low Operating and Clamping Voltage z Solid-State Silicon Avalanche Technology Pin Configurations Top View M: M.

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Datasheet Details

Part number UESD6V8S2B
Manufacturer Union Semiconductor
File Size 117.12 KB
Description Dual Line ESD Protection Diode Array
Datasheet download datasheet UESD6V8S2B Datasheet

Full PDF Text Transcription for UESD6V8S2B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UESD6V8S2B. For precise diagrams, and layout, please refer to the original PDF.

UESD6V8S2B Dual Line ESD Protection Diode Array UESD6V8S2B SOT523 General Description The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from ...

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of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD and is for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to two lines. TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.

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