Download 10N70Z-Q Datasheet PDF
Unisonic Technologies
10N70Z-Q
DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. - FEATURES - RDS(ON) <1.2Ω@VGS =10V - Fast switching - 100% avalanche tested - Improved dv/dt capability - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70ZL-TF1-T 10N70ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube - MARKING .unisonic..tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B20.a Preliminary Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source...