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10N70-Q - N-CHANNEL POWER MOSFET

General Description

The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) =1.2Ω@VGS =10V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET TO-220F TO-220F1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1  FEATURES * RDS(ON) =1.