10N70-Q Overview
The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
10N70-Q Key Features
- RDS(ON) =1.2Ω@VGS =10V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
