10N70-Q Key Features
- RDS(ON) =1.2Ω@VGS =10V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- Part: 10N70-Q
- Description: N-CHANNEL POWER MOSFET
- Manufacturer: Unisonic Technologies
- Size: 207.36 KB
Other 10N70-Q Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
10N70-MH | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
10N70-ML | N-CHANNEL POWER MOSFET |
Inchange Semiconductor |
10N70 | N-Channel Mosfet Transistor |