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10N80 - N-CHANNEL POWER MOSFET

Description

The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=5.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 10N80 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=5.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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