11N50 Overview
The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and mutation mode.
11N50 Key Features
- Low Gate Charge: 43nC (TYP.)
- 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V
- Fast Switching
- Low CRSS: 25pF (TYP.)
- With 100% Avalanche Tested
- Improved dv/dt Capability
- Fast Recovery Body Diode: 90ns (TYP.)
- SYMBOL
- ORDERING INFORMATION
- Preliminary
