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11N50 - N-CHANNEL POWER MOSFET

General Description

The UTC 11N50 is an N-channel enhancement mode Power FET.

It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.

It also can withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • ES.
  • Low Gate Charge: 43nC (TYP. ).
  • 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V.
  • Fast Switching.
  • Low CRSS: 25pF (TYP. ).
  • With 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • Fast Recovery Body Diode: 90ns (TYP. ).
  • SYMBOL D G S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. 1 TO-220F1 „ FEATURES * Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.