Datasheet4U Logo Datasheet4U.com

11N50K-MT - N-CHANNEL POWER MOSFET

General Description

The UTC 11N50K-MT is a N-channel enhancement mode power MOSFET.

It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.

It also can withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • S.
  • RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A.
  • Fast Switching.
  • With 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
11N50-CB N-CHANNEL MOSFET UTC
11N50E PowerMOS transistors Philips
11N06LT PHB11N06LT NXP Semiconductors
11N120CN HGTG11N120CN Fairchild Semiconductor
11N3L N-channel Power MOSFET STMicroelectronics

Other Datasheets by Unisonic Technologies

Part Number Description
11N50 N-CHANNEL POWER MOSFET
11N60K-MT N-CHANNEL POWER MOSFET
11N80 N-CHANNEL MOSFET
11N90 N-CHANNEL POWER MOSFET
11NM40 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-MT is a N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.