12P10 - 100V P-CHANNEL POWER MOSFET

Description

The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

Features

S.
RDS(ON) < 0.29Ω @ VGS=-10V, ID=-4.7A.
Low capacitance.
Low gate charge.
Fast switching capability.
Avalanche energy specified.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2016 Unisonic Technologies Co. , Ltd 1 of 6 QW-R502-262.M 12P10.

Unisonic Technologies

📥 Download Datasheet

Datasheet Details

Part number	12P10
Manufacturer	Unisonic Technologies
File Size	329.97 KB
Description	100V P-CHANNEL POWER MOSFET
Datasheet	12P10 Datasheet
Additional preview pages of the 12P10 datasheet.

📁 Similar Datasheet

12P20 - FQA12P20 (Fairchild Semiconductor)
12PS1142X - Single 10/100 Base-TX Lan Magnetic (Bothhand)
12PS6121A - Single 10/100 Base-TX Lan Magnetic (Bothhand)
12PS6121C - Single 10/100 Base-TX Lan Magnetic (Bothhand)
12PS6121CX - Single 10/100 Base-TX Lan Magnetic (Bothhand)
12PS6121UX - Single 10/100 Base-TX Lan Magnetic (Bothhand)

Other Datasheets by Unisonic Technologies

Full PDF Text Transcription

Click to expand full text

UNISONIC TECHNOLOGIES CO., LTD 12P10 -9.4A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) < 0.29Ω @ VGS=-10V, ID=-4.7A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-262.

Published: Feb 17, 2016 |