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2N70-M - N-CHANNEL POWER MOSFET

General Description

The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 6.3Ω@VGS = 10V.
  • Ultra Low gate charge (typical 17.2nC).
  • Low reverse transfer capacitance (CRSS = typical 5.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 1 Power MOSFET TO-220F TO-251.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 17.2nC) * Low reverse transfer capacitance (CRSS = typical 5.