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2N70-M Key Features
- RDS(ON) < 6.3Ω@VGS = 10V
- Ultra Low gate charge (typical 17.2nC)
- Low reverse transfer capacitance (CRSS = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
Other 2N70-M Datasheets
| Manufacturer |
Part Number |
Description |
Unisonic Technologies |
2N70-CA
|
N-CHANNEL MOSFET |
|
Unisonic Technologies |
2N70-CB
|
N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
2N70-HC
|
N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
2N70
|
N-CHANNEL POWER MOSFET |
Motorola Semiconductor |
2N700
|
PNP Transistor |
