2N70-M Overview
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2N70-M Key Features
- RDS(ON) < 6.3Ω@VGS = 10V
- Ultra Low gate charge (typical 17.2nC)
- Low reverse transfer capacitance (CRSS = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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- ORDERING INFORMATION
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