2SA1020 - PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

General Description

The UTC 2SA1020 is designed for power amplifier and power switching applications.

Key Features

S.
Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC= -1A).
High speed switching time: tSTG=1.0μs(TYP).
Complement to UTC 2SC2655.

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2SA1020 pnp epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	2SA1020
Manufacturer	Unisonic Technologies
File Size	648.96 KB
Description	PNP EPITAXIAL SILICON TRANSISTOR
Datasheet	2SA1020 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time: tSTG=1.