3N60 Datasheet | Unisonic Technologies

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. - FEATURES - VDS = 600V, ID = 3A - RDS(ON) < 3.6Ω @VGS = 10 V - Ultra low gate charge ( typical 18 n C ) - Low reverse transfer capacitance ( CRSS = typical 5.5 p F ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness - SYMBOL Power MOSFET .unisonic..tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-110.H - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N60L-TA3-T 3N60G-TA3-T 3N60L-TF1-T 3N60G-TF1-T 3N60L-TF3-T 3N60G-TF3-T 3N60L-TF3T-T 3N60G-TF3T-T 3N60L-TM3-T 3N60G-TM3-T 3N60L-TN3-R 3N60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-220F3 TO-251 TO-252 Power MOSFET Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel - MARKING...