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3N60 - N-CHANNEL POWER MOSFET

Description

The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • VDS = 600V, ID = 3A.
  • RDS(ON) < 3.6Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 18 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 5.5 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2014 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-110.H 3N60.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N60 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * VDS = 600V, ID = 3A * RDS(ON) < 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 18 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.
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