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3N60 - N-Channel MOSFET Transistor

Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Drain Current ID=3.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.