3N60
3N60 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES
- Drain Current ID=3.0A@ TC=25℃
- Drain Source Voltage-
: VDSS= 600V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max)
- Fast Switching
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching power supplies,converters,AC and DC motor controls
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
Gate-Source Voltage-Continuous
±30
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature
-55~150 ℃
- THERMAL CHARACTERISTICS
SYMBOL...