Download 3N60 Datasheet PDF
Inchange Semiconductor
3N60
3N60 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES - Drain Current ID=3.0A@ TC=25℃ - Drain Source Voltage- : VDSS= 600V(Min) - Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) - Fast Switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching power supplies,converters,AC and DC motor controls - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±30 Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL...