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3N60A

Manufacturer: Unisonic Technologies

3N60A datasheet by Unisonic Technologies.

3N60A datasheet preview

3N60A Datasheet Details

Part number 3N60A
Datasheet 3N60A_UnisonicTechnologies.pdf
File Size 439.39 KB
Manufacturer Unisonic Technologies
Description 600V N-CHANNEL POWER MOSFET
3N60A page 2 3N60A page 3

3N60A Overview

Power MOSFET The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

3N60A Key Features

  • VDS = 600V, ID = 3A
  • RDS(ON) = 3.6Ω @VGS = 10 V
  • Ultra low gate charge ( typical 10 nC )
  • Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • http://..co.kr/

3N60A4 from other manufacturers

View 3N60A4 datasheet index

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo 3N60A4 N-Channel IGBT Fairchild Semiconductor
nELL Logo 3N60 N-Channel Power MOSFET nELL
Inchange Semiconductor Logo 3N60 N-Channel MOSFET Transistor Inchange Semiconductor
UTC Logo 3N60-LC 600V N-CHANNEL POWER MOSFET UTC
UTC Logo 3N60-TC2 N-CHANNEL MOSFET UTC
Unisonic Technologies logo - Manufacturer

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