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3N60A - 600V N-CHANNEL POWER MOSFET

Description

The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Features

  • ES.
  • VDS = 600V, ID = 3A.
  • RDS(ON) = 3.6Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 10 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 5.5 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL www. DataSheet. net/ 2.Drain 1.Gate 3.Source.

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UNISONIC TECHNOLOGIES CO., LTD 3N60A 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * VDS = 600V, ID = 3A * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL www.DataSheet.net/ 2.Drain 1.
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