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3N90-E - N-CHANNEL POWER MOSFET

General Description

The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 3N90-E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 3N90-E. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 3N90-E 3.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low ga...

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provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  RDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TMS4-T 3N90G-TMS4-T 3N90L-TN3-R 3N90G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-251S2 TO-251S4 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube