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3N90-E

Manufacturer: Unisonic Technologies
3N90-E datasheet preview

Datasheet Details

Part number 3N90-E
Datasheet 3N90-E-UnisonicTechnologies.pdf
File Size 256.56 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
3N90-E page 2 3N90-E page 3

3N90-E Overview

The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

3N90-E Key Features

  • RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A
  • Fast Switching Capability
  • Avalanche Energy Specified
  • Improved dv/dt Capability, High Ruggedness
  • SYMBOL
  • RDERING INFORMATION
  • MARKING

3N90 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Inchange Semiconductor Logo 3N90 N-Channel MOSFET Transistor Inchange Semiconductor
Rectron Logo 3N900 N-Channel ENHANCEMENT MODE MOSFET Rectron
Samsung Electronics Logo 3N90A Advanced Power MOSFET Samsung Electronics
Unisonic Technologies logo - Manufacturer

More Datasheets from Unisonic Technologies

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Part Number Description
3N90 N-CHANNEL POWER MOSFET

3N90-E Distributor

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