3N90-E - N-CHANNEL POWER MOSFET

Description

The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	3N90-E
Manufacturer	Unisonic Technologies
File Size	256.56 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	3N90-E Datasheet
Additional preview pages of the 3N90-E datasheet.

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3N90 - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N90-E 3.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  RDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TM3-T 3N90G-TM3-T 3N90L-TMS2-T 3N90G-TMS2-T 3N90L-TMS4-T 3N90G-TMS4-T 3N90L-TN3-R 3N90G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-251S2 TO-251S4 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel  MARKING www.unisonic.com.

Published: Feb 18, 2016 |