3N90 - N-CHANNEL POWER MOSFET

Description

The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

S.
RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.5A.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	3N90
Manufacturer	Unisonic Technologies
File Size	265.28 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	3N90 Datasheet
Additional preview pages of the 3N90 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.

Published: Feb 19, 2016 |