4N70-S Key Features
- RDS(ON) < 3.2 Ω @VGS = 10 V, ID=2A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
4N70-CB | N-CHANNEL MOSFET |
Unisonic Technologies |
4N70-ML | N-CHANNEL POWER MOSFET |
Unisonic Technologies |
4N70-TC4 | 700V N-CHANNEL POWER MOSFET |
| 4N70 | N-Channel MOSFET Transistor |