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5N50-P - N-CHANNEL POWER MOSFET

General Description

The UTC 5N50-P is a N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology.

This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

Key Features

  • RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.5 A.
  • 100% avalanche tested.
  • High switching speed.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2017 Unisonic Technologies Co. , Ltd 1 of 8 QW-R205-027.D 5N50-P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 5N50-P 5.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is a N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50-P can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.5 A * 100% avalanche tested * High switching speed  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co.