7N90 - 900V N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology specializes in allowing a minimum on-state resistance and superior switching performance.

Features

High switching speed.
RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=3.5A.
100% avalanche tested.
Improved dv/dt capability.
SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-475.J 7N90 Preliminary.

Unisonic Technologies

📥 Download Datasheet

Datasheet Details

Part number	7N90
Manufacturer	Unisonic Technologies
File Size	660.65 KB
Description	900V N-CHANNEL POWER MOSFET
Datasheet	7N90 Datasheet
Additional preview pages of the 7N90 datasheet.

📁 Similar Datasheet

7N90 - N-Channel MOSFET Transistor (Inchange Semiconductor)
7N90A - N-Channel MOSFET (INCHANGE)
7N90K5 - N-channel Power MOSFET (STMicroelectronics)
7N95K3 - Power MOSFET (STMicroelectronics)

Other Datasheets by Unisonic Technologies

7N90-MK6 - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text

UNISONIC TECHNOLOGIES CO., LTD 7N90 7.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N90 is universally applied in active power factor correction, electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.  FEATURES * High switching speed * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=3.5A * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co.

Published: Dec 31, 2012 |