7N90 Datasheet | Specifications & PDF Download

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N-CHANNEL POWER MOSFET SSH7N90A FEATURES BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance

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FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N90 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volta

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N90A ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast

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UNISONIC TECHNOLOGIES CO., LTD 7N90 7.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advance

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UNISONIC TECHNOLOGIES CO., LTD 7N90-MK6 Preliminary 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSF

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isc N-Channel MOSFET Transistor FMH07N90E ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-R

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FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS

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www.DataSheet.co.kr http://www.fujisemi.com FMH07N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N90/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMA7N90/TMAN7N90 VDSS = 990 V @

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS

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SAMWIN SW7N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■ Improved dv/dt Capability ■ 1

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SW7N90 PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology ena

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STF7N90K5 Datasheet N-channel 900 V, 0.72 Ω typ., 7 A, MDmesh™ K5 Power MOSFET in a TO-220FP package Features Order code VDS RDS(on ) max. ID ST

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