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7N90 Datasheet, Features, Application

7N90 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transi.

INCHANGE

FMH07N90E - N-Channel MOSFET

isc N-Channel MOSFET Transistor FMH07N90E ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-R.
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Fuji Electric

FMH07N90E - N-CHANNEL SILICON POWER MOSFET

www.DataSheet.co.kr http://www.fujisemi.com FMH07N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact.
1.0 · rating-1
Fairchild

SSH7N90A - N-Channel Power Mosfets

N-CHANNEL POWER MOSFET SSH7N90A FEATURES BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance.
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TRinno

TMPF7N90G - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N90/.
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Inchange Semiconductor

7N90 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N90 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volta.
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TRinno

TMA7N90 - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMA7N90/TMAN7N90 VDSS = 990 V @.
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Samsung

SSH7N90 - N-Channel Power Mosfets

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1.0 · rating-1
TRinno

TMP7N90 - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N90/.
1.0 · rating-1
TRinno

TMAN7N90 - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMA7N90/TMAN7N90 VDSS = 990 V @.
1.0 · rating-1
Unisonic Technologies

7N90 - 900V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 7N90 7.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advance.
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Unisonic Technologies

7N90-MK6 - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 7N90-MK6 Preliminary 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSF.
1.0 · rating-1
Fairchild Semiconductor

FQA7N90 - 900V N-Channel MOSFET

FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.
1.0 · rating-1
Fairchild Semiconductor

FQA7N90M - 900V N-Channel MOSFET

FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.
1.0 · rating-1
Fairchild Semiconductor

FQAF7N90 - 900V N-Channel MOSFET

FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.
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IXYS Corporation

IXFH7N90 - Power MOSFET

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Samsung Electronics

SSF7N90A - Advanced Power MOSFET

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IXYS Corporation

IXFH7N90Q - Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS.
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IXYS Corporation

IXFT7N90Q - Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS.
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SAMWIN

SW7N90 - N-channel MOSFET

SAMWIN SW7N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■ Improved dv/dt Capability ■ 1.
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SEMIWILL

SW7N90 - N-CHANNEL POWER MOSFET

SW7N90 PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology ena.
1.0 · rating-1
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