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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
IXFH 7N90Q IXFT 7N90Q
VDSS ID25 RDS(on)
= 900 V = 7A = 1.5 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
900
V
900
V
±20
V
±30
V
7
A
28
A
7
A
20
mJ
700
mJ
5
V/ns
180 -55 ... +150
150 -55 ... +150
300
1.13/10 6 4
W
°C °C °C °C
Nm/lb.in.
IXFT7N90Q Datasheet
