Overview: HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS(on) = 900 V = 7A = 1.5 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 900 V 900 V ±20 V ±30 V 7 A 28 A 7 A 20 mJ 700 mJ 5 V/ns 180 -55 ... +150
150 -55 ... +150
300
1.13/10 6 4 W
°C °C °C °C
Nm/lb.in.
g g Test Conditions
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 V 3.0 5.
