IXFT7N90Q Datasheet | IXYS

Hi Per FETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS(on) = 900 V = 7A = 1.5 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings ±20 ±30 20 m J 700 m J V/ns 180 -55 ... +150 150 -55 ... +150 1.13/10 6 4 °C °C °C °C Nm/lb.in. g g Test Conditions VGS = 0 V, ID = 1 m A VDS = VGS, ID = 2.5 m A VGS = ±20 VDC, VDS =...