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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
IXFH/IXFT 68N20 IXFH/IXFT 74N20
200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 68N20 74N20 68N20 74N20 68N20 74N20
Maximum Ratings 200 200 ± 20 ± 30 68 74 272 296 68 74 45 5 360 -55 ... +150 150 -55 ...