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UTC2SA1015 - PNP EPITAXIAL SILICON TRANSISTOR

Key Features

  • Collector-Emitter Voltage: BVCEO=-50V.
  • Collector current up to 150mA.
  • High hFE linearity.
  • Complement to 2SC1815 1 TO-92 1:.

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UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic IB Tj TSTG RATING -50 -50 -5 400 -150 -50 125 -65 ~ +150 UNIT V V V mW mA mA °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off curre