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UTC2SA1020 - PNP EPITAXIAL SILICON TRANSISTOR

General Description

The UTC 2SA1020 is designed for power amplifier and power switching applications.

Key Features

  • Low collector saturation voltage: VCE(sat)=-0.5V(max. ) (IC=-1A).
  • High speed switching time: tstg=1.0µs(Typ. ).
  • Complement to UTC 2SC2655 SOT-89 1:.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.5 1 150 -55 ~ +150 UNIT V V V A W W °C °C Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 × 0.