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UTT60N06 - N-CHANNEL POWER MOSFET

General Description

The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance.

usually used at telecom and computer applications.

Key Features

  • ES.
  • RDS(ON) = 18mΩ @VGS = 10 V.
  • Fast switching capability.
  • Avalanche energy Specified.
  • SYMBOL 2.Drain 1.Gate www. DataSheet. net/ 3.Source.

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Full PDF Text Transcription for UTT60N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT60N06. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTT60N06 N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT60N06 is n-channel enhancement mode power field effe...

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MOSFET The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. „ FEATURES * RDS(ON) = 18mΩ @VGS = 10 V * Fast switching capability * Avalanche energy Specified „ SYMBOL 2.Drain 1.Gate www.DataSheet.net/ 3.Source „ ORDERING INFORMATION Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free UTT60N06L-TN3-R UTT60N06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technolo

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