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11N90 Description

The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.

11N90 Key Features

  • RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A
  • High switching speed
  • Improved dv/dt capability
  • 100% avalanche tested
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING