11N90 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

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UNISONIC TECHNOLOGIES CO., LTD 11N90 11A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’

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FQAF11N90C — N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.0 A, 1.1 Ω December 2013 Description This N-Channel enhancement mode

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Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet htt

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N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

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FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

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FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g

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FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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TSA11N90M TSA11N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @

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isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

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www.DataSheet.co.kr FMV11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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FMR11N90E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) ch

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HFA11N90 March 2014 HFA11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ  ȍ ID = 11 A FEATURES ‰ Originative New Design ‰ Superior Avala

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N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

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TSA11N90MZ TSA11N90MZ 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog

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www.DataSheet.co.kr FMH11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 10

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