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Wisdom Semiconductor
WFW11N90
Features
■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
N-Channel MOSFET
Symbol 1. Gate{
TO-247
{ 2. Drain
●
◀▲
● ●
{ 3.
WFW11N90 Datasheet
