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TSA11N90MZ Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSA11N90MZ TSA11N90MZ 900V N-Channel MOSFET General.

Datasheet Details

Part number TSA11N90MZ
Manufacturer Truesemi
File Size 281.89 KB
Description N-Channel MOSFET
Datasheet TSA11N90MZ-Truesemi.pdf

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 11A,900V,Max. RDS(on)=1.20Ω @ VGS =10V.
  • Low gate charge(typical 45nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC =.

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