Datasheet Details
| Part number | TSA11N90MZ |
|---|---|
| Manufacturer | Truesemi |
| File Size | 281.89 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSA11N90MZ Datasheet
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General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 11A,900V,Max. RDS(on)=1.20Ω @ VGS =10V.
- Low gate charge(typical 45nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC =.