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TSA10N80M - N-Channel MOSFET

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Truesemi

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TSA10N80M N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSA10N80M

Datasheet Details

Part number	TSA10N80M
Manufacturer	Truesemi
File Size	224.53 KB
Description	N-Channel MOSFET
Datasheet	TSA10N80M Datasheet
Additional preview pages of the TSA10N80M datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

10.0A, 800V, RDS(on) = 1.10Ω @VGS = 10 V.
Low gate charge ( typical 45nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability G DS TO-3P or TO247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanch.

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Published: Apr 12, 2017 |